GRAPES
  • Home
  • About
    • Intro
    • Leadership
    • Partners
    • Marketing Materials
  • Research
    • Intro
    • Projects
    • Related Research
    • Faculty
    • Students
    • Facilities
  • Membership
    • Membership Types
    • Member Benefits
  • News
    • Articles
    • Calendar-Meetings and Webinars
  • Contact
  • Login
Select Page

Transmission Expansion Planning Using Probabilistic Security Constraints for Data Center Load Growth (26-06)

by Abby Shaw | Feb 12, 2026

Principal Investigator: Dr. Roy McCann Transmission Expansion Planning (TEP) is a critical component of power system development, aimed at identifying optimal infrastructure investments to meet future electricity demand while ensuring system reliability and minimizing...

Advanced Press-Pack Power Module Packaging for High Voltage SiC and Ultrawide Bandgap Devices (26-04)

by Abby Shaw | Feb 12, 2026

Principal Investigator: Dr. Xiaoqing Song This project aims to develop a new press-pack power module technology that can fully harness the advantages of next-generation semiconductor devices such as silicon carbide (SiC) and gallium oxide (Ga₂O₃). Traditional...

A Reality Check on 35 kV-Class Solid-State Transformers: Challenges and Prospects (26-03)

by Abby Shaw | Feb 12, 2026

Principal Investigator: Dr. Yue Zhao As AI workloads continue to grow in scale and density, data center power requirements are rapidly approaching the multi-megawatt range, making traditional low-voltage distribution systems increasing impractical. Conventional...

Power Quality Assessment of Power Systems with Large Penetration of IBRs (26-02)

by Abby Shaw | Feb 12, 2026

Principal Investigator: Dr. Rob Cuzner and Dr. Yongjune Shin A Control Hardware-in-the-Loop (CHiL) real-time (RT) simulation multi-platform environment will developed and utilized to realize a unified modeling framework for the purpose of deriving parameterized and...

Design and Development of a 20kV High Voltage SiC Switch for Next Generation Energy Conversion and Grid Modernization (25-09)

by Karin Alvarado | May 20, 2025

Principal Investigator: Dr. Xiaoqing Song and Dr. Yue Zhao High-voltage silicon carbide (SiC) devices, like 10–15 kV MOSFETs and IGBTs, are showing better performance than traditional silicon power devices because they can handle higher voltages and switch faster....
« Older Entries

Recent Posts

  • Inside MUSiC: Dr. Alan Mantooth on Silicon Carbide Innovation
  • U of A Collaborates with Defense Department to Develop Video Tracking Tool
  • America’s First Multi-User Silicon Carbide Fab Launches in Arkansas
  • Engineers Can Earn CEU Credits Through New Online Courses
  • GRAPES Fall IAB Meeting – November 13-14, 2025

Recent Comments

    Archives

    • December 2025
    • October 2025
    • September 2025
    • April 2025
    • December 2024
    • October 2024
    • May 2024
    • April 2020
    • November 2019
    • July 2018
    • June 2018
    • March 2018
    • February 2018
    • December 2017
    • November 2017
    • October 2017
    • September 2017
    • June 2017
    • May 2017
    • April 2017
    • February 2017
    • December 2016
    • November 2016
    • October 2016
    • September 2016
    • June 2016
    • May 2016
    • April 2016
    • March 2016
    • December 2014
    • September 2014
    • July 2014
    • April 2013
    • February 2013
    • January 2013
    • December 2012
    • July 2012
    • May 2012
    • February 2012
    • December 2011
    • November 2011
    • May 2010
    • March 2010

    Categories

    • GRAPES
    • Meetings
    • News
    • Private

    Meta

    • Log in
    • Entries feed
    • Comments feed
    • WordPress.org
    • Facebook
    • Instagram
    ©2015-2026 The Power Group. GRid-connected Advanced Power Electronics Systems (GRAPES)
    Website Design, and Development by Blue Zoo | A Creative Agency. Your Message. Our Passion. With Pride.™
    Privacy Policy