High Voltage SiC MOSFET Power Module with Optimized Electric Field Distribution and EMI Performance (21-04)

Principal Investigator: Dr. Alan Mantooth

The UA packaging team is developing a 10 kV power module architecture. The proposed work will provide an advanced packaging architecture for 10 kV SiC MOSFET multi-chip half-bridge power module. It will provide the research needed to understand what advanced packaging materials, structures and fabrication methods are to enable high voltage(≥10 kV) SiC power module packaging, which can be transferred to industry partners that can then be used in the design of new WBG-based module or equipment. With the proposed 10 kV module, it can help to reduce the number of levels and devices needed to meet the voltage requirement of a given medium to high voltage system, which opens the door to significantly improve existing applications as well as create new applications. These applications include high speed/high power motors, high voltage circuit breakers, solid-state transformers, and smart grid-tie systems. The proposed 10 kV module also provides a platform to develop gate drivers and sensing technologies for high voltage SiC applications.


Posted on

January 6, 2021

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