Principal Investigator: Dr. Xiaoqing Song and Dr. Yue Zhao
High-voltage silicon carbide (SiC) devices, like 10–15 kV MOSFETs and IGBTs, are showing better performance than traditional silicon power devices because they can handle higher voltages and switch faster. This makes them ideal for high-power converters, improving efficiency, reliability, and reducing size. However, these SiC devices are still expensive and in the early research stage due to the cost of materials and production. A more practical solution is to connect several SiC devices in series to create a high-voltage switch. This project focuses on developing a 20kV SiC switch by stacking three 6.5kV SiC MOSFETs in series. While this approach is promising, it introduces challenges like voltage imbalances during switching and issues with current in the gate drivers and power supplies. To solve these problems, the project introduces three innovations: 1) active voltage balancing between the connected devices; 2) a compact, high-insulation power supply and gate-driver design; and 3) an optimized layout for better performance. The end result will be a 20kV SiC switch that is more efficient, reliable, and suitable for future high-voltage power systems.
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